We have investigated DC characteristics and analog performance parameters in Single Halo SDODEL MOSFET, Double Halo SDODEL MOSFET and compared their performance with Double Halo MOSFETs (which will henceforth be referred to as Control MOSFETs) with extensive process and device simulations. work are referred to as the Source Drain On Depletion Layer (SDODEL) MOSFETs in the earlier studies. These pseudo SOI structures studied in this. It has been shown that this approach leads to improved performance and lower power dissipation for sub 100nm CMOS technologies. In this paper, with the help of extensive TCAD simulations, a novel channel and source/drain (S/D) impurity profile engineering has been proposed for pseudo SOI MOSFET structures in order to reduce their junction capacitances. They reduce its active current by ten-fold from the conventional Both schemes are evaluated for a conceptually-designed 16-GbĭRAM. This scheme shortens the period in which the large subthreshold currentįlows. Is shut off and the output level is kept by the flip-flop level holder. Operating period, while in the inactive period the subthreshold current The inverter is supplied with power only in the Of the chip, the operating period of the inverter is distinguished from
Level holder for random combinational logic circuits. The other scheme is a switched-power-supply inverter with a Scheme to word drivers, decoders and sense-amplifier driving circuitsĪre shown. This scheme minimizes the number ofĬircuits carrying the large subthreshold current. Supplied with power, while the subthreshold current to the many Group of circuits is divided into blocks only the selected block is Hierarchical power-line scheme for iterative circuits. To suppress the increase in current in multi-gigabit DRAM's. Two subthreshold-current reduction circuit schemes are described Improvement of short-channel immunity and the other device electrical (over one technology generation) improvement. Uniform-channel MOSFET without pocket implant, which is a significant The theoretical optimal pocket implant performance is toĪchieve an Lmin approximately 55~60% that of a Methodology to optimize the minimum channel length Lmin is Two-dimensional (2-D) numerical simulation. The validity of the model is verified by both experimental data and Pocket implant has an exponential dependence on channel length and is The new model shows that the Vth roll-up component due to VBS, and pocket parameters down to 0.1-μm channel length. An analytical model is developed which can predict Lateral channel-engineering (pocket or halo implant) has been The normal and reverse short-channel effect of LDD MOSFET's with It has also been investigated for analog performance like trans-conductance generation factor (gm/ID) and overall gain (gmR0). The device has been investigated for digital performance parameters like the variation of substrate–body voltage on DIBL, IOFF, ION and the threshold voltage VT for sub 100nm technology generation. The impact of gate dielectric permittivity along with the different angles of halo implants on short channel performance contributing to the DIBL, the subthreshold swing, ION/IOFF ratio, and the threshold voltage VT are studied for two different EOT thicknesses. In this paper, we systematically increase the value of gate dielectric (3.9–50) and investigate its effects on conventional, low angle of tilt (10o) and high angle of tilt (50o) halo implants for different device parameters of 100nm n-MOSFETs using two different EOT viz.
HALO IMPLANT ION IOFF GAIN RO SIMULATOR
The impact of high permittivity gate dielectrics with different equivalent oxide thickness (EOT) for conventional, low and high tilt angle halo implants on the performance of 100nm n-MOSFETs device is studied using device simulator Synopsys ISE-TCAD. The accuracy of the results has been verified by 3-D SILVACO ATLAS. The aforementioned devices are also tested for transconductance (gm) which is an analog performance parameter. The high-? dielectric Hafnium oxide (HfO2) exhibits the best material to minimize SCEs for GAA structures. The parameters are evaluated for various high-k dielectric materials. These parameters are also termed as Short Channel Effects (SCEs) and for a nanoscale device performance these parameters needs to be controlled. The study is based on the ground of logic performance parameters which are Ion/Ioff current ratio, Drain Induced Barrier Lowering (DIBL), Subthreshold Swing (SS) and Threshold voltage (Vt) roll-off. The comparative study of Double Gate MOSFET (DGMOSFET), Tri-gate Fin Field Effect Transistor (FinFET) and Gate All Around (GAA) FinFET structures has been done for 22nm and 16nm technologies. FinFETs are the alternative new device structure, which replaces the MOSFET. The MOSFET device performance deteriorates when it is scaled down to 45nm node and an alternative device structure being studied.
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